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SI8806DB-T2-E1

Vishay · BGA

Single N-Channel 12 V 0.9 W 17 nC Silicon Surface Mount Mosfet - MICRO-FOOT

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RoHSCompliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
BGA
Mounting style
Surface Mount
Packaging
Tape & Reel
Temperature
- 55 C – + 150 C
Width
840µm
Height
213µm
Length
840µm
Fall Time
12ns
Lead Free
Lead Free
Rise Time
20ns
REACH SVHC
No
Rds On Max
43mO
Schedule B
8541210080
Number of Pins
4
Show 15 more specifications
Power Dissipation
900mW
Threshold Voltage
400mV
Number of Channels
1
Number of Elements
1
Turn On Delay Time
10ns
Radiation Hardening
No
Turn Off Delay Time
30ns
Element Configuration
Single
Max Power Dissipation
900mW
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
35mO
Gate to Source Voltage (Vgs)
8V
Continuous Drain Current (ID)
3.9A
Drain to Source Voltage (Vdss)
12V

Common questions about SI8806DB-T2-E1

What is SI8806DB-T2-E1?
SI8806DB-T2-E1 is Single N-Channel 12 V 0.9 W 17 nC Silicon Surface Mount Mosfet - MICRO-FOOT, manufactured by Vishay.
Who manufactures SI8806DB-T2-E1?
SI8806DB-T2-E1 is manufactured by Vishay.
What package does SI8806DB-T2-E1 come in?
SI8806DB-T2-E1 comes in a BGA package (Surface Mount).
Is SI8806DB-T2-E1 RoHS compliant?
The RoHS status of SI8806DB-T2-E1 is: Compliant.
Where can I buy SI8806DB-T2-E1?
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