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SIA427DJ-T1-GE3

Vishay

Trans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R / MOSFET P-CH 8V 12A SC-70-6

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RoHSCompliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Mounting style
Surface Mount
Width
2.05mm
Height
750µm
Length
2.05mm
Fall Time
40ns
Lead Free
Lead Free
Rise Time
20ns
REACH SVHC
Unknown
Rds On Max
16mO
Resistance
13mO
Schedule B
8541290080
Number of Pins
6
Input Capacitance
2.3nF
Power Dissipation
3.5W
Show 15 more specifications
Threshold Voltage
350mV
Number of Channels
1
Number of Elements
1
Turn On Delay Time
20ns
Radiation Hardening
No
Turn Off Delay Time
70ns
Element Configuration
Single
Max Power Dissipation
19W
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
13mO
Gate to Source Voltage (Vgs)
5V
Continuous Drain Current (ID)
12A
Drain to Source Voltage (Vdss)
8V
Drain to Source Breakdown Voltage
8V

Common questions about SIA427DJ-T1-GE3

What is SIA427DJ-T1-GE3?
SIA427DJ-T1-GE3 is Trans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R / MOSFET P-CH 8V 12A SC-70-6, manufactured by Vishay.
Who manufactures SIA427DJ-T1-GE3?
SIA427DJ-T1-GE3 is manufactured by Vishay.
Is SIA427DJ-T1-GE3 RoHS compliant?
The RoHS status of SIA427DJ-T1-GE3 is: Compliant.
Where can I buy SIA427DJ-T1-GE3?
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