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SIA436DJ-T1-GE3
Vishay
SIA436DJ-T1-GE3 N-channel MOSFET Transistor; 12 A; 8 V; 6-Pin PowerPAK SC-70
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- Width
- 2.05mm
- Height
- 750µm
- Length
- 2.05mm
- Fall Time
- 8ns
- Rise Time
- 10ns
- REACH SVHC
- Unknown
- Rds On Max
- 9.4mO
- Schedule B
- 8541290080
- Number of Pins
- 6
- Input Capacitance
- 1.508nF
- Power Dissipation
- 3.5W
- Threshold Voltage
- 350mV
Show 15 more specificationsShow fewer specifications
- Number of Channels
- 1
- Number of Elements
- 1
- Turn On Delay Time
- 11ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 30ns
- Element Configuration
- Single
- Max Power Dissipation
- 19W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 7.8mO
- Gate to Source Voltage (Vgs)
- 5V
- Continuous Drain Current (ID)
- 12A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 8V
- Drain to Source Breakdown Voltage
- 8V
Common questions about SIA436DJ-T1-GE3
- What is SIA436DJ-T1-GE3?
- SIA436DJ-T1-GE3 is SIA436DJ-T1-GE3 N-channel MOSFET Transistor; 12 A; 8 V; 6-Pin PowerPAK SC-70, manufactured by Vishay.
- Who manufactures SIA436DJ-T1-GE3?
- SIA436DJ-T1-GE3 is manufactured by Vishay.
- Is SIA436DJ-T1-GE3 RoHS compliant?
- The RoHS status of SIA436DJ-T1-GE3 is: Compliant.
- Where can I buy SIA436DJ-T1-GE3?
- Send an RFQ to Makat and our AI agents source SIA436DJ-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.