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SIA537EDJ-T1-GE3
Vishay
-Ch/P-Ch 12 V/20 V 28 mOhm/54 mOhm SMT TrenchFET® Power Mosfet - SC-70
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- Weight
- 28.009329mg
- Fall Time
- 10ns
- Rise Time
- 15ns
- REACH SVHC
- Unknown
- Rds On Max
- 28mO
- Schedule B
- 8541290080
- Number of Pins
- 6
- Input Capacitance
- 455pF
- Threshold Voltage
- 1V
- Number of Channels
- 2
- Turn On Delay Time
- 15ns
- Turn Off Delay Time
- 30ns
Show 8 more specificationsShow fewer specifications
- Max Power Dissipation
- 7.8W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 75mO
- Gate to Source Voltage (Vgs)
- 8V
- Continuous Drain Current (ID)
- 4.5A
- Drain to Source Voltage (Vdss)
- 20V
- Drain to Source Breakdown Voltage
- 20V
Common questions about SIA537EDJ-T1-GE3
- What is SIA537EDJ-T1-GE3?
- SIA537EDJ-T1-GE3 is -Ch/P-Ch 12 V/20 V 28 mOhm/54 mOhm SMT TrenchFET® Power Mosfet - SC-70, manufactured by Vishay.
- Who manufactures SIA537EDJ-T1-GE3?
- SIA537EDJ-T1-GE3 is manufactured by Vishay.
- Is SIA537EDJ-T1-GE3 RoHS compliant?
- The RoHS status of SIA537EDJ-T1-GE3 is: Compliant.
- Where can I buy SIA537EDJ-T1-GE3?
- Send an RFQ to Makat and our AI agents source SIA537EDJ-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.