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SIA537EDJ-T1-GE3

Vishay

-Ch/P-Ch 12 V/20 V 28 mOhm/54 mOhm SMT TrenchFET® Power Mosfet - SC-70

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RoHSCompliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Mounting style
Surface Mount
Packaging
Tape & Reel
Weight
28.009329mg
Fall Time
10ns
Rise Time
15ns
REACH SVHC
Unknown
Rds On Max
28mO
Schedule B
8541290080
Number of Pins
6
Input Capacitance
455pF
Threshold Voltage
1V
Number of Channels
2
Turn On Delay Time
15ns
Turn Off Delay Time
30ns
Show 8 more specifications
Max Power Dissipation
7.8W
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
75mO
Gate to Source Voltage (Vgs)
8V
Continuous Drain Current (ID)
4.5A
Drain to Source Voltage (Vdss)
20V
Drain to Source Breakdown Voltage
20V

Common questions about SIA537EDJ-T1-GE3

What is SIA537EDJ-T1-GE3?
SIA537EDJ-T1-GE3 is -Ch/P-Ch 12 V/20 V 28 mOhm/54 mOhm SMT TrenchFET® Power Mosfet - SC-70, manufactured by Vishay.
Who manufactures SIA537EDJ-T1-GE3?
SIA537EDJ-T1-GE3 is manufactured by Vishay.
Is SIA537EDJ-T1-GE3 RoHS compliant?
The RoHS status of SIA537EDJ-T1-GE3 is: Compliant.
Where can I buy SIA537EDJ-T1-GE3?
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