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SIA811ADJ-T1-GE3
Vishay
MOSFET P-CH 20V 4.5A PPAK SC70-6
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Surface Mount
- Width
- 2.05mm
- Height
- 750µm
- Length
- 2.05mm
- Weight
- 28.009329mg
- Fall Time
- 10ns
- Rise Time
- 45ns
- Rds On Max
- 116mO
- Number of Pins
- 6
- Input Capacitance
- 345pF
- Power Dissipation
- 1.8W
- Number of Channels
- 1
- Number of Elements
- 1
- Turn On Delay Time
- 15ns
Show 10 more specificationsShow fewer specifications
- Radiation Hardening
- No
- Turn Off Delay Time
- 20ns
- Max Power Dissipation
- 6.5W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 165mO
- Gate to Source Voltage (Vgs)
- 8V
- Continuous Drain Current (ID)
- 3.2A
- Drain to Source Voltage (Vdss)
- 20V
- Drain to Source Breakdown Voltage
- 20V
Common questions about SIA811ADJ-T1-GE3
- What is SIA811ADJ-T1-GE3?
- SIA811ADJ-T1-GE3 is MOSFET P-CH 20V 4.5A PPAK SC70-6, manufactured by Vishay.
- Who manufactures SIA811ADJ-T1-GE3?
- SIA811ADJ-T1-GE3 is manufactured by Vishay.
- Is SIA811ADJ-T1-GE3 RoHS compliant?
- The RoHS status of SIA811ADJ-T1-GE3 is: Compliant.
- Where can I buy SIA811ADJ-T1-GE3?
- Send an RFQ to Makat and our AI agents source SIA811ADJ-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.