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SIA811ADJ-T1-GE3

Vishay

MOSFET P-CH 20V 4.5A PPAK SC70-6

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RoHSCompliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Mounting style
Surface Mount
Width
2.05mm
Height
750µm
Length
2.05mm
Weight
28.009329mg
Fall Time
10ns
Rise Time
45ns
Rds On Max
116mO
Number of Pins
6
Input Capacitance
345pF
Power Dissipation
1.8W
Number of Channels
1
Number of Elements
1
Turn On Delay Time
15ns
Show 10 more specifications
Radiation Hardening
No
Turn Off Delay Time
20ns
Max Power Dissipation
6.5W
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
165mO
Gate to Source Voltage (Vgs)
8V
Continuous Drain Current (ID)
3.2A
Drain to Source Voltage (Vdss)
20V
Drain to Source Breakdown Voltage
20V

Common questions about SIA811ADJ-T1-GE3

What is SIA811ADJ-T1-GE3?
SIA811ADJ-T1-GE3 is MOSFET P-CH 20V 4.5A PPAK SC70-6, manufactured by Vishay.
Who manufactures SIA811ADJ-T1-GE3?
SIA811ADJ-T1-GE3 is manufactured by Vishay.
Is SIA811ADJ-T1-GE3 RoHS compliant?
The RoHS status of SIA811ADJ-T1-GE3 is: Compliant.
Where can I buy SIA811ADJ-T1-GE3?
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