CatalogSend an RFQ
SIE812DF-T1-E3
Vishay
ransistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:60000mA; On Resistance, Rds(on):0.0034ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage,
RoHSCompliant
- Manufacturer
- Vishay
- Mounting style
- Surface Mount
- Width
- 5.16mm
- Height
- 800µm
- Length
- 6.15mm
- Fall Time
- 10ns
- Lead Free
- Lead Free
- Rise Time
- 15ns
- REACH SVHC
- No
- Rds On Max
- 2.6mO
- Resistance
- 2.6MO
- Number of Pins
- 10
- Input Capacitance
- 8.3nF
- Power Dissipation
- 5.2W
- Threshold Voltage
- 2.3V
- Number of Channels
- 1