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SIHB10N40D-GE3
Vishay · TO-263
MOSFET 400V 600mOhm@10V 10A N-Ch D-SRS
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-263
- Mounting style
- Surface Mount
- Fall Time
- 14ns
- Rise Time
- 18ns
- Rds On Max
- 600mO
- Input Capacitance
- 526pF
- Turn On Delay Time
- 12ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 18ns
- Max Power Dissipation
- 147W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Gate to Source Voltage (Vgs)
- 30V
- Continuous Drain Current (ID)
- 10A
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- Drain to Source Voltage (Vdss)
- 400V
Common questions about SIHB10N40D-GE3
- What is SIHB10N40D-GE3?
- SIHB10N40D-GE3 is MOSFET 400V 600mOhm@10V 10A N-Ch D-SRS, manufactured by Vishay.
- Who manufactures SIHB10N40D-GE3?
- SIHB10N40D-GE3 is manufactured by Vishay.
- What package does SIHB10N40D-GE3 come in?
- SIHB10N40D-GE3 comes in a TO-263 package (Surface Mount).
- Is SIHB10N40D-GE3 RoHS compliant?
- The RoHS status of SIHB10N40D-GE3 is: Compliant.
- Where can I buy SIHB10N40D-GE3?
- Send an RFQ to Makat and our AI agents source SIHB10N40D-GE3 across the whole supplier network, with verified offers inside 48 hours.