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SIHB12N65E-GE3
Vishay · TO-263
Trans MOSFET N-CH 650V 12A 3-Pin(2+Tab) D2PAK
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-263
- Mounting style
- Surface Mount
- Packaging
- Bulk
- Temperature
- - 55 C – + 150 C
- Weight
- 1.437803g
- Fall Time
- 18ns
- Lead Free
- Lead Free
- Rise Time
- 19ns
- REACH SVHC
- Unknown
- Rds On Max
- 380mO
- Number of Pins
- 3
- Input Capacitance
- 1.224nF
- Power Dissipation
- 156W
- Number of Channels
- 1
Show 13 more specificationsShow fewer specifications
- Number of Elements
- 1
- Turn On Delay Time
- 16ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 35ns
- Element Configuration
- Single
- Max Power Dissipation
- 156W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 392mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 12A
- Drain to Source Voltage (Vdss)
- 650V
- Drain to Source Breakdown Voltage
- 700V
Common questions about SIHB12N65E-GE3
- What is SIHB12N65E-GE3?
- SIHB12N65E-GE3 is Trans MOSFET N-CH 650V 12A 3-Pin(2+Tab) D2PAK, manufactured by Vishay.
- Who manufactures SIHB12N65E-GE3?
- SIHB12N65E-GE3 is manufactured by Vishay.
- What package does SIHB12N65E-GE3 come in?
- SIHB12N65E-GE3 comes in a TO-263 package (Surface Mount).
- Is SIHB12N65E-GE3 RoHS compliant?
- The RoHS status of SIHB12N65E-GE3 is: Compliant.
- Where can I buy SIHB12N65E-GE3?
- Send an RFQ to Makat and our AI agents source SIHB12N65E-GE3 across the whole supplier network, with verified offers inside 48 hours.