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SIHB12N65E-GE3

Vishay · TO-263

Trans MOSFET N-CH 650V 12A 3-Pin(2+Tab) D2PAK

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RoHSCompliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
TO-263
Mounting style
Surface Mount
Packaging
Bulk
Temperature
- 55 C – + 150 C
Weight
1.437803g
Fall Time
18ns
Lead Free
Lead Free
Rise Time
19ns
REACH SVHC
Unknown
Rds On Max
380mO
Number of Pins
3
Input Capacitance
1.224nF
Power Dissipation
156W
Number of Channels
1
Show 13 more specifications
Number of Elements
1
Turn On Delay Time
16ns
Radiation Hardening
No
Turn Off Delay Time
35ns
Element Configuration
Single
Max Power Dissipation
156W
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
392mO
Gate to Source Voltage (Vgs)
20V
Continuous Drain Current (ID)
12A
Drain to Source Voltage (Vdss)
650V
Drain to Source Breakdown Voltage
700V

Common questions about SIHB12N65E-GE3

What is SIHB12N65E-GE3?
SIHB12N65E-GE3 is Trans MOSFET N-CH 650V 12A 3-Pin(2+Tab) D2PAK, manufactured by Vishay.
Who manufactures SIHB12N65E-GE3?
SIHB12N65E-GE3 is manufactured by Vishay.
What package does SIHB12N65E-GE3 come in?
SIHB12N65E-GE3 comes in a TO-263 package (Surface Mount).
Is SIHB12N65E-GE3 RoHS compliant?
The RoHS status of SIHB12N65E-GE3 is: Compliant.
Where can I buy SIHB12N65E-GE3?
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