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SIHB21N60EF-GE3
Vishay · TO-263
Transisitor Power MOSFET with Fast Body Diode 600V Vds 30V Vgs TO-263
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-263
- Mounting style
- Surface Mount
- Rds On Max
- 176mO
- Schedule B
- 8541290080
- Input Capacitance
- 2.03nF
- Max Power Dissipation
- 227W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Continuous Drain Current (ID)
- 21A
- Drain to Source Voltage (Vdss)
- 600V
Common questions about SIHB21N60EF-GE3
- What is SIHB21N60EF-GE3?
- SIHB21N60EF-GE3 is Transisitor Power MOSFET with Fast Body Diode 600V Vds 30V Vgs TO-263, manufactured by Vishay.
- Who manufactures SIHB21N60EF-GE3?
- SIHB21N60EF-GE3 is manufactured by Vishay.
- What package does SIHB21N60EF-GE3 come in?
- SIHB21N60EF-GE3 comes in a TO-263 package (Surface Mount).
- Is SIHB21N60EF-GE3 RoHS compliant?
- The RoHS status of SIHB21N60EF-GE3 is: Compliant.
- Where can I buy SIHB21N60EF-GE3?
- Send an RFQ to Makat and our AI agents source SIHB21N60EF-GE3 across the whole supplier network, with verified offers inside 48 hours.