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SIHB22N65E-GE3
Vishay · TO-263
MOSFET, N CH, 650V, 22A, TO-263-3
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-263
- Mounting style
- Surface Mount
- Packaging
- Bulk
- Fall Time
- 38ns
- Rise Time
- 33ns
- REACH SVHC
- Unknown
- Rds On Max
- 180mO
- Number of Pins
- 3
- Input Capacitance
- 2.415nF
- Power Dissipation
- 227W
- Number of Elements
- 1
- Turn Off Delay Time
- 73ns
- Element Configuration
- Single
- Max Power Dissipation
- 227W
Show 7 more specificationsShow fewer specifications
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 180mO
- Gate to Source Voltage (Vgs)
- 4V
- Continuous Drain Current (ID)
- 22A
- Drain to Source Voltage (Vdss)
- 650V
- Drain to Source Breakdown Voltage
- 650V
Common questions about SIHB22N65E-GE3
- What is SIHB22N65E-GE3?
- SIHB22N65E-GE3 is MOSFET, N CH, 650V, 22A, TO-263-3, manufactured by Vishay.
- Who manufactures SIHB22N65E-GE3?
- SIHB22N65E-GE3 is manufactured by Vishay.
- What package does SIHB22N65E-GE3 come in?
- SIHB22N65E-GE3 comes in a TO-263 package (Surface Mount).
- Is SIHB22N65E-GE3 RoHS compliant?
- The RoHS status of SIHB22N65E-GE3 is: Compliant.
- Where can I buy SIHB22N65E-GE3?
- Send an RFQ to Makat and our AI agents source SIHB22N65E-GE3 across the whole supplier network, with verified offers inside 48 hours.