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SIHB33N60EF-GE3
Vishay · TO-263
Trans MOSFET N-CH 600V 33A 3-Pin D2PAK
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-263
- Mounting style
- Surface Mount
- Width
- 9.65mm
- Height
- 4.83mm
- Length
- 10.67mm
- Weight
- 1.946308g
- Fall Time
- 48ns
- Rise Time
- 43ns
- Rds On Max
- 98mO
- Input Capacitance
- 3.454nF
- Number of Channels
- 1
- Turn On Delay Time
- 28ns
- Turn Off Delay Time
- 161ns
- Element Configuration
- Single
Show 7 more specificationsShow fewer specifications
- Max Power Dissipation
- 278W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 98mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 33A
- Drain to Source Voltage (Vdss)
- 600V
Common questions about SIHB33N60EF-GE3
- What is SIHB33N60EF-GE3?
- SIHB33N60EF-GE3 is Trans MOSFET N-CH 600V 33A 3-Pin D2PAK, manufactured by Vishay.
- Who manufactures SIHB33N60EF-GE3?
- SIHB33N60EF-GE3 is manufactured by Vishay.
- What package does SIHB33N60EF-GE3 come in?
- SIHB33N60EF-GE3 comes in a TO-263 package (Surface Mount).
- Is SIHB33N60EF-GE3 RoHS compliant?
- The RoHS status of SIHB33N60EF-GE3 is: Compliant.
- Where can I buy SIHB33N60EF-GE3?
- Send an RFQ to Makat and our AI agents source SIHB33N60EF-GE3 across the whole supplier network, with verified offers inside 48 hours.