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SIHB8N50D-GE3
Vishay · TO-263
MOSFET 500V 850mOhms@10V 8.7A N-Ch D-SRS
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-263
- Mounting style
- Surface Mount
- Fall Time
- 11ns
- Rise Time
- 16ns
- Rds On Max
- 850mO
- Input Capacitance
- 527pF
- Turn On Delay Time
- 13ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 17ns
- Max Power Dissipation
- 156W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Gate to Source Voltage (Vgs)
- 30V
- Continuous Drain Current (ID)
- 8.7A
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- Drain to Source Voltage (Vdss)
- 500V
Common questions about SIHB8N50D-GE3
- What is SIHB8N50D-GE3?
- SIHB8N50D-GE3 is MOSFET 500V 850mOhms@10V 8.7A N-Ch D-SRS, manufactured by Vishay.
- Who manufactures SIHB8N50D-GE3?
- SIHB8N50D-GE3 is manufactured by Vishay.
- What package does SIHB8N50D-GE3 come in?
- SIHB8N50D-GE3 comes in a TO-263 package (Surface Mount).
- Is SIHB8N50D-GE3 RoHS compliant?
- The RoHS status of SIHB8N50D-GE3 is: Compliant.
- Where can I buy SIHB8N50D-GE3?
- Send an RFQ to Makat and our AI agents source SIHB8N50D-GE3 across the whole supplier network, with verified offers inside 48 hours.