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Catalog

SIHB8N50D-GE3

Vishay · TO-263

MOSFET 500V 850mOhms@10V 8.7A N-Ch D-SRS

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RoHSCompliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
TO-263
Mounting style
Surface Mount
Fall Time
11ns
Rise Time
16ns
Rds On Max
850mO
Input Capacitance
527pF
Turn On Delay Time
13ns
Radiation Hardening
No
Turn Off Delay Time
17ns
Max Power Dissipation
156W
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Gate to Source Voltage (Vgs)
30V
Continuous Drain Current (ID)
8.7A
Show 1 more specification
Drain to Source Voltage (Vdss)
500V

Common questions about SIHB8N50D-GE3

What is SIHB8N50D-GE3?
SIHB8N50D-GE3 is MOSFET 500V 850mOhms@10V 8.7A N-Ch D-SRS, manufactured by Vishay.
Who manufactures SIHB8N50D-GE3?
SIHB8N50D-GE3 is manufactured by Vishay.
What package does SIHB8N50D-GE3 come in?
SIHB8N50D-GE3 comes in a TO-263 package (Surface Mount).
Is SIHB8N50D-GE3 RoHS compliant?
The RoHS status of SIHB8N50D-GE3 is: Compliant.
Where can I buy SIHB8N50D-GE3?
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