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SIHD12N50E-GE3
Vishay · TO-252
ower Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-252
- Weight
- 1.437803g
- REACH SVHC
- Unknown
- Number of Pins
- 3
- Threshold Voltage
- 4V
- Number of Channels
- 1
- Max Power Dissipation
- 114W
- Max Operating Temperature
- 150°C
- Drain to Source Resistance
- 380mO
- Continuous Drain Current (ID)
- 10.5A
- Drain to Source Voltage (Vdss)
- 500V
Common questions about SIHD12N50E-GE3
- What is SIHD12N50E-GE3?
- SIHD12N50E-GE3 is ower Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, manufactured by Vishay.
- Who manufactures SIHD12N50E-GE3?
- SIHD12N50E-GE3 is manufactured by Vishay.
- What package does SIHD12N50E-GE3 come in?
- SIHD12N50E-GE3 comes in a TO-252 package.
- Is SIHD12N50E-GE3 RoHS compliant?
- The RoHS status of SIHD12N50E-GE3 is: Compliant.
- Where can I buy SIHD12N50E-GE3?
- Send an RFQ to Makat and our AI agents source SIHD12N50E-GE3 across the whole supplier network, with verified offers inside 48 hours.