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SIHD3N50D-GE3
Vishay · TO-252
Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-252
- Mounting style
- Surface Mount
- Width
- 6.22mm
- Height
- 2.38mm
- Length
- 6.73mm
- Weight
- 1.437803g
- Fall Time
- 13ns
- Rise Time
- 9ns
- REACH SVHC
- Unknown
- Rds On Max
- 3.2O
- Number of Pins
- 3
- Input Capacitance
- 175pF
- Power Dissipation
- 104W
- Threshold Voltage
- 3V
Show 14 more specificationsShow fewer specifications
- Number of Channels
- 1
- Number of Elements
- 1
- Turn On Delay Time
- 12ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 11ns
- Element Configuration
- Single
- Max Power Dissipation
- 104W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 3.2O
- Gate to Source Voltage (Vgs)
- 30V
- Continuous Drain Current (ID)
- 3A
- Drain to Source Voltage (Vdss)
- 500V
- Drain to Source Breakdown Voltage
- 500V
Common questions about SIHD3N50D-GE3
- What is SIHD3N50D-GE3?
- SIHD3N50D-GE3 is Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, manufactured by Vishay.
- Who manufactures SIHD3N50D-GE3?
- SIHD3N50D-GE3 is manufactured by Vishay.
- What package does SIHD3N50D-GE3 come in?
- SIHD3N50D-GE3 comes in a TO-252 package (Surface Mount).
- Is SIHD3N50D-GE3 RoHS compliant?
- The RoHS status of SIHD3N50D-GE3 is: Compliant.
- Where can I buy SIHD3N50D-GE3?
- Send an RFQ to Makat and our AI agents source SIHD3N50D-GE3 across the whole supplier network, with verified offers inside 48 hours.