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SIHD6N62ET1-GE3
Vishay · DPAK
MOSFET N-CH 620V 6A TO252AA
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- DPAK
- Height
- 2.507mm
- Power Dissipation
- 78W
- Number of Channels
- 1
- Turn On Delay Time
- 12ns
- Turn Off Delay Time
- 22ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 780mO
- Gate to Source Voltage (Vgs)
- 30V
- Continuous Drain Current (ID)
- 6A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 620V
- Drain to Source Breakdown Voltage
- 620V
Common questions about SIHD6N62ET1-GE3
- What is SIHD6N62ET1-GE3?
- SIHD6N62ET1-GE3 is MOSFET N-CH 620V 6A TO252AA, manufactured by Vishay.
- Who manufactures SIHD6N62ET1-GE3?
- SIHD6N62ET1-GE3 is manufactured by Vishay.
- What package does SIHD6N62ET1-GE3 come in?
- SIHD6N62ET1-GE3 comes in a DPAK package.
- Where can I buy SIHD6N62ET1-GE3?
- Send an RFQ to Makat and our AI agents source SIHD6N62ET1-GE3 across the whole supplier network, with verified offers inside 48 hours.