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SIHD6N62ET1-GE3

Vishay · DPAK

MOSFET N-CH 620V 6A TO252AA

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Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
DPAK
Height
2.507mm
Power Dissipation
78W
Number of Channels
1
Turn On Delay Time
12ns
Turn Off Delay Time
22ns
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
780mO
Gate to Source Voltage (Vgs)
30V
Continuous Drain Current (ID)
6A
Max Junction Temperature (Tj)
150°C
Drain to Source Voltage (Vdss)
620V
Drain to Source Breakdown Voltage
620V

Common questions about SIHD6N62ET1-GE3

What is SIHD6N62ET1-GE3?
SIHD6N62ET1-GE3 is MOSFET N-CH 620V 6A TO252AA, manufactured by Vishay.
Who manufactures SIHD6N62ET1-GE3?
SIHD6N62ET1-GE3 is manufactured by Vishay.
What package does SIHD6N62ET1-GE3 come in?
SIHD6N62ET1-GE3 comes in a DPAK package.
Where can I buy SIHD6N62ET1-GE3?
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