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SIHD9N60E-GE3
Vishay
E Series Power MOSFET
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Height
- 2.507mm
- Power Dissipation
- 78W
- Number of Channels
- 1
- Turn On Delay Time
- 14ns
- Turn Off Delay Time
- 31ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 320mO
- Gate to Source Voltage (Vgs)
- 30V
- Continuous Drain Current (ID)
- 9A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 600V
- Drain to Source Breakdown Voltage
- 600V
Common questions about SIHD9N60E-GE3
- What is SIHD9N60E-GE3?
- SIHD9N60E-GE3 is E Series Power MOSFET, manufactured by Vishay.
- Who manufactures SIHD9N60E-GE3?
- SIHD9N60E-GE3 is manufactured by Vishay.
- Is SIHD9N60E-GE3 RoHS compliant?
- The RoHS status of SIHD9N60E-GE3 is: Compliant.
- Where can I buy SIHD9N60E-GE3?
- Send an RFQ to Makat and our AI agents source SIHD9N60E-GE3 across the whole supplier network, with verified offers inside 48 hours.