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SIHG14N50D-GE3

Vishay · TO-247

ISHAY SIHG14N50D-GE3 MOSFET Transistor, N Channel, 14 A, 500 V, 0.32 ohm, 10 V, 3 V

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RoHSCompliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
TO-247
Mounting style
Through Hole
Width
5.31mm
Height
20.82mm
Length
15.87mm
Weight
38.000013g
Fall Time
26ns
Lead Free
Lead Free
Rise Time
27ns
REACH SVHC
Unknown
Rds On Max
400mO
Number of Pins
3
Input Capacitance
1.144nF
Threshold Voltage
3V
Show 14 more specifications
Number of Channels
1
Turn On Delay Time
16ns
Dual Supply Voltage
100V
Radiation Hardening
No
Turn Off Delay Time
29ns
Element Configuration
Single
Max Power Dissipation
208W
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
400mO
Gate to Source Voltage (Vgs)
30V
Continuous Drain Current (ID)
14A
Drain to Source Voltage (Vdss)
500V
Drain to Source Breakdown Voltage
500V

Common questions about SIHG14N50D-GE3

What is SIHG14N50D-GE3?
SIHG14N50D-GE3 is ISHAY SIHG14N50D-GE3 MOSFET Transistor, N Channel, 14 A, 500 V, 0.32 ohm, 10 V, 3 V, manufactured by Vishay.
Who manufactures SIHG14N50D-GE3?
SIHG14N50D-GE3 is manufactured by Vishay.
What package does SIHG14N50D-GE3 come in?
SIHG14N50D-GE3 comes in a TO-247 package (Through Hole).
Is SIHG14N50D-GE3 RoHS compliant?
The RoHS status of SIHG14N50D-GE3 is: Compliant.
Where can I buy SIHG14N50D-GE3?
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