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SIHG25N40D-GE3
Vishay · TO-247
Power Field-Effect Transistor, 25A I(D), 400V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-247
- Mounting style
- Through Hole
- Packaging
- Bulk
- Width
- 5.31mm
- Height
- 20.82mm
- Length
- 15.87mm
- Weight
- 38.000013g
- Fall Time
- 37ns
- Rise Time
- 57ns
- REACH SVHC
- Unknown
- Rds On Max
- 170mO
- Schedule B
- 8541290080
- Number of Pins
- 3
- Input Capacitance
- 1.707nF
Show 14 more specificationsShow fewer specifications
- Threshold Voltage
- 3V
- Number of Channels
- 1
- Turn On Delay Time
- 21ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 40ns
- Element Configuration
- Single
- Max Power Dissipation
- 278W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 170mO
- Gate to Source Voltage (Vgs)
- 30V
- Continuous Drain Current (ID)
- 25A
- Drain to Source Voltage (Vdss)
- 400V
- Drain to Source Breakdown Voltage
- 400V
Common questions about SIHG25N40D-GE3
- What is SIHG25N40D-GE3?
- SIHG25N40D-GE3 is Power Field-Effect Transistor, 25A I(D), 400V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, manufactured by Vishay.
- Who manufactures SIHG25N40D-GE3?
- SIHG25N40D-GE3 is manufactured by Vishay.
- What package does SIHG25N40D-GE3 come in?
- SIHG25N40D-GE3 comes in a TO-247 package (Through Hole).
- Is SIHG25N40D-GE3 RoHS compliant?
- The RoHS status of SIHG25N40D-GE3 is: Compliant.
- Where can I buy SIHG25N40D-GE3?
- Send an RFQ to Makat and our AI agents source SIHG25N40D-GE3 across the whole supplier network, with verified offers inside 48 hours.