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Catalog

SIHG25N40D-GE3

Vishay · TO-247

Power Field-Effect Transistor, 25A I(D), 400V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

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RoHSCompliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
TO-247
Mounting style
Through Hole
Packaging
Bulk
Width
5.31mm
Height
20.82mm
Length
15.87mm
Weight
38.000013g
Fall Time
37ns
Rise Time
57ns
REACH SVHC
Unknown
Rds On Max
170mO
Schedule B
8541290080
Number of Pins
3
Input Capacitance
1.707nF
Show 14 more specifications
Threshold Voltage
3V
Number of Channels
1
Turn On Delay Time
21ns
Radiation Hardening
No
Turn Off Delay Time
40ns
Element Configuration
Single
Max Power Dissipation
278W
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
170mO
Gate to Source Voltage (Vgs)
30V
Continuous Drain Current (ID)
25A
Drain to Source Voltage (Vdss)
400V
Drain to Source Breakdown Voltage
400V

Common questions about SIHG25N40D-GE3

What is SIHG25N40D-GE3?
SIHG25N40D-GE3 is Power Field-Effect Transistor, 25A I(D), 400V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, manufactured by Vishay.
Who manufactures SIHG25N40D-GE3?
SIHG25N40D-GE3 is manufactured by Vishay.
What package does SIHG25N40D-GE3 come in?
SIHG25N40D-GE3 comes in a TO-247 package (Through Hole).
Is SIHG25N40D-GE3 RoHS compliant?
The RoHS status of SIHG25N40D-GE3 is: Compliant.
Where can I buy SIHG25N40D-GE3?
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