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SIHG33N65E-GE3
Vishay · TO-247
Power Field-Effect Transistor, 32.4A I(D), 650V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RoHSCompliant
- Manufacturer
- Vishay
- Package / case
- TO-247
- Mounting style
- Through Hole
- Rds On Max
- 105mO
- Number of Pins
- 3
- Input Capacitance
- 4.04nF
- Threshold Voltage
- 4V
- Max Power Dissipation
- 313W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 90mO
- Continuous Drain Current (ID)
- 32.4A
- Drain to Source Voltage (Vdss)
- 650V