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SIHG70N60AEF-GE3
Vishay
MOSFET, N-CH, 600V, 60A, TO-247AC
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Height
- 24.99mm
- Power Dissipation
- 417W
- Number of Channels
- 1
- Turn On Delay Time
- 45ns
- Turn Off Delay Time
- 219ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 35.5mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 60A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 600V
- Drain to Source Breakdown Voltage
- 600V
Common questions about SIHG70N60AEF-GE3
- What is SIHG70N60AEF-GE3?
- SIHG70N60AEF-GE3 is MOSFET, N-CH, 600V, 60A, TO-247AC, manufactured by Vishay.
- Who manufactures SIHG70N60AEF-GE3?
- SIHG70N60AEF-GE3 is manufactured by Vishay.
- Is SIHG70N60AEF-GE3 RoHS compliant?
- The RoHS status of SIHG70N60AEF-GE3 is: Compliant.
- Where can I buy SIHG70N60AEF-GE3?
- Send an RFQ to Makat and our AI agents source SIHG70N60AEF-GE3 across the whole supplier network, with verified offers inside 48 hours.