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Catalog

SIHH068N60E-T1-GE3

Vishay

MOSFET, N-CH, 600V, 34A, 150DEG C, 202W; Transistor Polarity: N Channel; Continuous Drain Current Id: 34A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.059ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 2

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Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Height
1.05mm
Schedule B
8541290080
Power Dissipation
202W
Number of Channels
1
Turn On Delay Time
56ns
Turn Off Delay Time
60ns
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
59mO
Gate to Source Voltage (Vgs)
30V
Continuous Drain Current (ID)
34A
Max Junction Temperature (Tj)
150°C
Drain to Source Voltage (Vdss)
600V
Drain to Source Breakdown Voltage
600V

Common questions about SIHH068N60E-T1-GE3

What is SIHH068N60E-T1-GE3?
SIHH068N60E-T1-GE3 is MOSFET, N-CH, 600V, 34A, 150DEG C, 202W; Transistor Polarity: N Channel; Continuous Drain Current Id: 34A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.059ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 2, manufactured by Vishay.
Who manufactures SIHH068N60E-T1-GE3?
SIHH068N60E-T1-GE3 is manufactured by Vishay.
Where can I buy SIHH068N60E-T1-GE3?
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