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SIHH068N60E-T1-GE3
Vishay
MOSFET, N-CH, 600V, 34A, 150DEG C, 202W; Transistor Polarity: N Channel; Continuous Drain Current Id: 34A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.059ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 2
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Height
- 1.05mm
- Schedule B
- 8541290080
- Power Dissipation
- 202W
- Number of Channels
- 1
- Turn On Delay Time
- 56ns
- Turn Off Delay Time
- 60ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 59mO
- Gate to Source Voltage (Vgs)
- 30V
- Continuous Drain Current (ID)
- 34A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 600V
- Drain to Source Breakdown Voltage
- 600V
Common questions about SIHH068N60E-T1-GE3
- What is SIHH068N60E-T1-GE3?
- SIHH068N60E-T1-GE3 is MOSFET, N-CH, 600V, 34A, 150DEG C, 202W; Transistor Polarity: N Channel; Continuous Drain Current Id: 34A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.059ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 2, manufactured by Vishay.
- Who manufactures SIHH068N60E-T1-GE3?
- SIHH068N60E-T1-GE3 is manufactured by Vishay.
- Where can I buy SIHH068N60E-T1-GE3?
- Send an RFQ to Makat and our AI agents source SIHH068N60E-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.