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SIHJ10N60E-T1-GE3
Vishay
600Volt, 10Amp, 360mohm, PPAKSO-8
RoHSNon-Compliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Height
- 1.267mm
- Schedule B
- 8541290080
- Power Dissipation
- 89W
- Number of Channels
- 1
- Turn On Delay Time
- 16ns
- Turn Off Delay Time
- 31ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 313mO
- Gate to Source Voltage (Vgs)
- 30V
- Continuous Drain Current (ID)
- 10A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 600V
- Drain to Source Breakdown Voltage
- 600V
Common questions about SIHJ10N60E-T1-GE3
- What is SIHJ10N60E-T1-GE3?
- SIHJ10N60E-T1-GE3 is 600Volt, 10Amp, 360mohm, PPAKSO-8, manufactured by Vishay.
- Who manufactures SIHJ10N60E-T1-GE3?
- SIHJ10N60E-T1-GE3 is manufactured by Vishay.
- Is SIHJ10N60E-T1-GE3 RoHS compliant?
- The RoHS status of SIHJ10N60E-T1-GE3 is: Non-Compliant.
- Where can I buy SIHJ10N60E-T1-GE3?
- Send an RFQ to Makat and our AI agents source SIHJ10N60E-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.