CatalogSend an RFQ
SIHJ6N65E-T1-GE3
Vishay
MOSFET, N-CH, 650V, 5.6A, POWERPAKSO
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Surface Mount
- REACH SVHC
- No
- Rds On Max
- 868mO
- Schedule B
- 8541290080
- Number of Pins
- 4
- Input Capacitance
- 596pF
- Threshold Voltage
- 2V
- Max Power Dissipation
- 74W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 755mO
- Continuous Drain Current (ID)
- 5.6A
- Drain to Source Voltage (Vdss)
- 650V
Common questions about SIHJ6N65E-T1-GE3
- What is SIHJ6N65E-T1-GE3?
- SIHJ6N65E-T1-GE3 is MOSFET, N-CH, 650V, 5.6A, POWERPAKSO, manufactured by Vishay.
- Who manufactures SIHJ6N65E-T1-GE3?
- SIHJ6N65E-T1-GE3 is manufactured by Vishay.
- Is SIHJ6N65E-T1-GE3 RoHS compliant?
- The RoHS status of SIHJ6N65E-T1-GE3 is: Compliant.
- Where can I buy SIHJ6N65E-T1-GE3?
- Send an RFQ to Makat and our AI agents source SIHJ6N65E-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.