CatalogSend an RFQ
SIHP17N60D-GE3
Vishay · TO-220
MOSFET 600V 17A 277.8W 340mOhm @10V
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-220
- Mounting style
- Through Hole
- Weight
- 6.000006g
- Fall Time
- 30ns
- Rise Time
- 56ns
- Rds On Max
- 340mO
- Number of Pins
- 3
- Input Capacitance
- 1.78nF
- Number of Channels
- 1
- Turn On Delay Time
- 22ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 37ns
- Max Power Dissipation
- 277.8W
- Max Operating Temperature
- 150°C
Show 6 more specificationsShow fewer specifications
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 340mO
- Gate to Source Voltage (Vgs)
- 30V
- Continuous Drain Current (ID)
- 17A
- Drain to Source Voltage (Vdss)
- 600V
- Drain to Source Breakdown Voltage
- 600V
Common questions about SIHP17N60D-GE3
- What is SIHP17N60D-GE3?
- SIHP17N60D-GE3 is MOSFET 600V 17A 277.8W 340mOhm @10V, manufactured by Vishay.
- Who manufactures SIHP17N60D-GE3?
- SIHP17N60D-GE3 is manufactured by Vishay.
- What package does SIHP17N60D-GE3 come in?
- SIHP17N60D-GE3 comes in a TO-220 package (Through Hole).
- Is SIHP17N60D-GE3 RoHS compliant?
- The RoHS status of SIHP17N60D-GE3 is: Compliant.
- Where can I buy SIHP17N60D-GE3?
- Send an RFQ to Makat and our AI agents source SIHP17N60D-GE3 across the whole supplier network, with verified offers inside 48 hours.