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SIHP21N65EF-GE3
Vishay · TO-220
MOSFET 650V Vds +/-30V Vgs Rds(On) 0.18@10V
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-220
- Mounting style
- Through Hole
- Packaging
- Bulk
- Weight
- 6.000006g
- Fall Time
- 68ns
- Rise Time
- 34ns
- REACH SVHC
- Unknown
- Rds On Max
- 180mO
- Number of Pins
- 3
- Input Capacitance
- 2.322nF
- Number of Channels
- 1
- Turn On Delay Time
- 22ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 68ns
Show 9 more specificationsShow fewer specifications
- Element Configuration
- Single
- Max Power Dissipation
- 208W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 180mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 21A
- Drain to Source Voltage (Vdss)
- 650V
- Drain to Source Breakdown Voltage
- 700V
Common questions about SIHP21N65EF-GE3
- What is SIHP21N65EF-GE3?
- SIHP21N65EF-GE3 is MOSFET 650V Vds +/-30V Vgs Rds(On) 0.18@10V, manufactured by Vishay.
- Who manufactures SIHP21N65EF-GE3?
- SIHP21N65EF-GE3 is manufactured by Vishay.
- What package does SIHP21N65EF-GE3 come in?
- SIHP21N65EF-GE3 comes in a TO-220 package (Through Hole).
- Is SIHP21N65EF-GE3 RoHS compliant?
- The RoHS status of SIHP21N65EF-GE3 is: Compliant.
- Where can I buy SIHP21N65EF-GE3?
- Send an RFQ to Makat and our AI agents source SIHP21N65EF-GE3 across the whole supplier network, with verified offers inside 48 hours.