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SIHP33N60EF-GE3
Vishay · TO-220
Single N-Channel 600 V 0.098 Ohm 155 nC 278 W Silicon Mosfet - TO-220-3
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-220
- Mounting style
- Through Hole
- Weight
- 6.000006g
- Fall Time
- 48ns
- Rise Time
- 43ns
- REACH SVHC
- Unknown
- Rds On Max
- 98mO
- Number of Pins
- 3
- Input Capacitance
- 3.454nF
- Threshold Voltage
- 4V
- Number of Channels
- 1
- Turn On Delay Time
- 28ns
- Turn Off Delay Time
- 161ns
- Element Configuration
- Single
Show 7 more specificationsShow fewer specifications
- Max Power Dissipation
- 278W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 98mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 33A
- Drain to Source Voltage (Vdss)
- 600V
Common questions about SIHP33N60EF-GE3
- What is SIHP33N60EF-GE3?
- SIHP33N60EF-GE3 is Single N-Channel 600 V 0.098 Ohm 155 nC 278 W Silicon Mosfet - TO-220-3, manufactured by Vishay.
- Who manufactures SIHP33N60EF-GE3?
- SIHP33N60EF-GE3 is manufactured by Vishay.
- What package does SIHP33N60EF-GE3 come in?
- SIHP33N60EF-GE3 comes in a TO-220 package (Through Hole).
- Is SIHP33N60EF-GE3 RoHS compliant?
- The RoHS status of SIHP33N60EF-GE3 is: Compliant.
- Where can I buy SIHP33N60EF-GE3?
- Send an RFQ to Makat and our AI agents source SIHP33N60EF-GE3 across the whole supplier network, with verified offers inside 48 hours.