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SIHP5N50D-E3
Vishay · TO-220
5.3A I(D) 500V 1.5ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-220
- Mounting style
- Through Hole
- Weight
- 6.000006g
- Fall Time
- 11ns
- Rise Time
- 11ns
- Rds On Max
- 1.5O
- Number of Pins
- 3
- Input Capacitance
- 325pF
- Power Dissipation
- 104W
- Number of Channels
- 1
- Number of Elements
- 1
- Turn On Delay Time
- 12ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 14ns
Show 8 more specificationsShow fewer specifications
- Element Configuration
- Single
- Max Power Dissipation
- 104W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 1.5O
- Gate to Source Voltage (Vgs)
- 30V
- Continuous Drain Current (ID)
- 5.3A
- Drain to Source Voltage (Vdss)
- 500V
Common questions about SIHP5N50D-E3
- What is SIHP5N50D-E3?
- SIHP5N50D-E3 is 5.3A I(D) 500V 1.5ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET, manufactured by Vishay.
- Who manufactures SIHP5N50D-E3?
- SIHP5N50D-E3 is manufactured by Vishay.
- What package does SIHP5N50D-E3 come in?
- SIHP5N50D-E3 comes in a TO-220 package (Through Hole).
- Is SIHP5N50D-E3 RoHS compliant?
- The RoHS status of SIHP5N50D-E3 is: Compliant.
- Where can I buy SIHP5N50D-E3?
- Send an RFQ to Makat and our AI agents source SIHP5N50D-E3 across the whole supplier network, with verified offers inside 48 hours.