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SIHP6N65E-GE3
Vishay · TO-220
E Series N Channel 700 V 0.6 O 48 nC Flange Mount Power Mosfet - TO-220AB
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-220
- Mounting style
- Through Hole
- Packaging
- Bulk
- Fall Time
- 20ns
- Lead Free
- Lead Free
- Rise Time
- 12ns
- Number of Pins
- 3
- Power Dissipation
- 78W
- Number of Elements
- 1
- Turn Off Delay Time
- 30ns
- Element Configuration
- Single
- Max Power Dissipation
- 78W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
Show 4 more specificationsShow fewer specifications
- Drain to Source Resistance
- 600mO
- Gate to Source Voltage (Vgs)
- 4V
- Continuous Drain Current (ID)
- 7A
- Drain to Source Voltage (Vdss)
- 650V
Common questions about SIHP6N65E-GE3
- What is SIHP6N65E-GE3?
- SIHP6N65E-GE3 is E Series N Channel 700 V 0.6 O 48 nC Flange Mount Power Mosfet - TO-220AB, manufactured by Vishay.
- Who manufactures SIHP6N65E-GE3?
- SIHP6N65E-GE3 is manufactured by Vishay.
- What package does SIHP6N65E-GE3 come in?
- SIHP6N65E-GE3 comes in a TO-220 package (Through Hole).
- Is SIHP6N65E-GE3 RoHS compliant?
- The RoHS status of SIHP6N65E-GE3 is: Compliant.
- Where can I buy SIHP6N65E-GE3?
- Send an RFQ to Makat and our AI agents source SIHP6N65E-GE3 across the whole supplier network, with verified offers inside 48 hours.