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SIHP7N60E-GE3

Vishay · TO-220AB

VISHAY SIHP7N60E-GE3 Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V

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RoHSCompliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
TO-220AB
Mounting style
Through Hole
Packaging
Bulk
Weight
6.000006g
Fall Time
14ns
Lead Free
Lead Free
Rise Time
13ns
REACH SVHC
Unknown
Rds On Max
600mO
Number of Pins
3
Input Capacitance
680pF
Power Dissipation
78W
Threshold Voltage
2V
Number of Channels
1
Show 13 more specifications
Number of Elements
1
Turn On Delay Time
13ns
Radiation Hardening
No
Turn Off Delay Time
24ns
Element Configuration
Single
Max Power Dissipation
78W
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
600mO
Gate to Source Voltage (Vgs)
20V
Continuous Drain Current (ID)
7A
Drain to Source Voltage (Vdss)
600V
Drain to Source Breakdown Voltage
600V

Common questions about SIHP7N60E-GE3

What is SIHP7N60E-GE3?
SIHP7N60E-GE3 is VISHAY SIHP7N60E-GE3 Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V, manufactured by Vishay.
Who manufactures SIHP7N60E-GE3?
SIHP7N60E-GE3 is manufactured by Vishay.
What package does SIHP7N60E-GE3 come in?
SIHP7N60E-GE3 comes in a TO-220AB package (Through Hole).
Is SIHP7N60E-GE3 RoHS compliant?
The RoHS status of SIHP7N60E-GE3 is: Compliant.
Where can I buy SIHP7N60E-GE3?
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