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SIHU2N80E-GE3
Vishay
OSFET, N-CH, 800V, 2.8A, TO-251
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Height
- 9.78mm
- Power Dissipation
- 62.5W
- Number of Channels
- 1
- Turn On Delay Time
- 11ns
- Turn Off Delay Time
- 19ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 2.38O
- Gate to Source Voltage (Vgs)
- 30V
- Continuous Drain Current (ID)
- 2.8A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 800V
- Drain to Source Breakdown Voltage
- 800V
Common questions about SIHU2N80E-GE3
- What is SIHU2N80E-GE3?
- SIHU2N80E-GE3 is OSFET, N-CH, 800V, 2.8A, TO-251, manufactured by Vishay.
- Who manufactures SIHU2N80E-GE3?
- SIHU2N80E-GE3 is manufactured by Vishay.
- Is SIHU2N80E-GE3 RoHS compliant?
- The RoHS status of SIHU2N80E-GE3 is: Compliant.
- Where can I buy SIHU2N80E-GE3?
- Send an RFQ to Makat and our AI agents source SIHU2N80E-GE3 across the whole supplier network, with verified offers inside 48 hours.