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SIHU3N50D-GE3
Vishay · TO-251
SERIES MOSFET N-CHANNEL 500V
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-251
- Mounting style
- Through Hole
- Packaging
- Bulk
- Width
- 2.39mm
- Height
- 6.22mm
- Length
- 6.73mm
- Weight
- 329.988449mg
- Fall Time
- 13ns
- Rise Time
- 9ns
- REACH SVHC
- Unknown
- Rds On Max
- 3.2O
- Number of Pins
- 3
- Input Capacitance
- 175pF
- Power Dissipation
- 104W
Show 14 more specificationsShow fewer specifications
- Threshold Voltage
- 3V
- Number of Channels
- 1
- Number of Elements
- 1
- Turn On Delay Time
- 12ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 11ns
- Element Configuration
- Single
- Max Power Dissipation
- 104W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 3.2O
- Gate to Source Voltage (Vgs)
- 30V
- Continuous Drain Current (ID)
- 3A
- Drain to Source Voltage (Vdss)
- 500V
Common questions about SIHU3N50D-GE3
- What is SIHU3N50D-GE3?
- SIHU3N50D-GE3 is SERIES MOSFET N-CHANNEL 500V, manufactured by Vishay.
- Who manufactures SIHU3N50D-GE3?
- SIHU3N50D-GE3 is manufactured by Vishay.
- What package does SIHU3N50D-GE3 come in?
- SIHU3N50D-GE3 comes in a TO-251 package (Through Hole).
- Is SIHU3N50D-GE3 RoHS compliant?
- The RoHS status of SIHU3N50D-GE3 is: Compliant.
- Where can I buy SIHU3N50D-GE3?
- Send an RFQ to Makat and our AI agents source SIHU3N50D-GE3 across the whole supplier network, with verified offers inside 48 hours.