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SIHU4N80E-GE3
Vishay
MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Height
- 8.5mm
- Power Dissipation
- 69W
- Number of Channels
- 1
- Turn On Delay Time
- 12ns
- Turn Off Delay Time
- 26ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 1.1O
- Gate to Source Voltage (Vgs)
- 30V
- Continuous Drain Current (ID)
- 4.3A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 800V
- Drain to Source Breakdown Voltage
- 800V
Common questions about SIHU4N80E-GE3
- What is SIHU4N80E-GE3?
- SIHU4N80E-GE3 is MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W, manufactured by Vishay.
- Who manufactures SIHU4N80E-GE3?
- SIHU4N80E-GE3 is manufactured by Vishay.
- Is SIHU4N80E-GE3 RoHS compliant?
- The RoHS status of SIHU4N80E-GE3 is: Compliant.
- Where can I buy SIHU4N80E-GE3?
- Send an RFQ to Makat and our AI agents source SIHU4N80E-GE3 across the whole supplier network, with verified offers inside 48 hours.