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SIHU6N62E-GE3
Vishay · TO-251
Trans MOSFET N-CH 620V 6A 3-Pin(3+Tab) TO-251
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-251
- Mounting style
- Through Hole
- Packaging
- Bulk
- Weight
- 329.988449mg
- Fall Time
- 16ns
- Lead Free
- Lead Free
- Rise Time
- 10ns
- REACH SVHC
- Unknown
- Rds On Max
- 900mO
- Number of Pins
- 3
- Input Capacitance
- 578pF
- Number of Channels
- 1
- Turn On Delay Time
- 12ns
- Radiation Hardening
- No
Show 9 more specificationsShow fewer specifications
- Turn Off Delay Time
- 22ns
- Element Configuration
- Single
- Max Power Dissipation
- 78W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 900mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 6A
- Drain to Source Voltage (Vdss)
- 620V
Common questions about SIHU6N62E-GE3
- What is SIHU6N62E-GE3?
- SIHU6N62E-GE3 is Trans MOSFET N-CH 620V 6A 3-Pin(3+Tab) TO-251, manufactured by Vishay.
- Who manufactures SIHU6N62E-GE3?
- SIHU6N62E-GE3 is manufactured by Vishay.
- What package does SIHU6N62E-GE3 come in?
- SIHU6N62E-GE3 comes in a TO-251 package (Through Hole).
- Is SIHU6N62E-GE3 RoHS compliant?
- The RoHS status of SIHU6N62E-GE3 is: Compliant.
- Where can I buy SIHU6N62E-GE3?
- Send an RFQ to Makat and our AI agents source SIHU6N62E-GE3 across the whole supplier network, with verified offers inside 48 hours.