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SIHU7N60E-E3
Vishay · TO-251
MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-251
- Mounting style
- Through Hole
- Weight
- 329.988449mg
- Fall Time
- 14ns
- Rise Time
- 13ns
- Rds On Max
- 600mO
- Number of Pins
- 3
- Input Capacitance
- 680pF
- Number of Channels
- 1
- Turn On Delay Time
- 13ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 24ns
- Element Configuration
- Single
- Max Power Dissipation
- 78W
Show 7 more specificationsShow fewer specifications
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 600mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 7A
- Drain to Source Voltage (Vdss)
- 600V
- Drain to Source Breakdown Voltage
- 600V
Common questions about SIHU7N60E-E3
- What is SIHU7N60E-E3?
- SIHU7N60E-E3 is MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS, manufactured by Vishay.
- Who manufactures SIHU7N60E-E3?
- SIHU7N60E-E3 is manufactured by Vishay.
- What package does SIHU7N60E-E3 come in?
- SIHU7N60E-E3 comes in a TO-251 package (Through Hole).
- Is SIHU7N60E-E3 RoHS compliant?
- The RoHS status of SIHU7N60E-E3 is: Compliant.
- Where can I buy SIHU7N60E-E3?
- Send an RFQ to Makat and our AI agents source SIHU7N60E-E3 across the whole supplier network, with verified offers inside 48 hours.