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SIHW73N60E-GE3
Vishay · TO-247
MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-247
- Mounting style
- Through Hole
- Weight
- 38.000013g
- Fall Time
- 120ns
- Rise Time
- 105ns
- Rds On Max
- 39mO
- Number of Pins
- 3
- Input Capacitance
- 7.7nF
- Number of Channels
- 1
- Turn On Delay Time
- 63ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 290ns
- Element Configuration
- Single
- Max Power Dissipation
- 520W
Show 7 more specificationsShow fewer specifications
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 39mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 73A
- Drain to Source Voltage (Vdss)
- 600V
- Drain to Source Breakdown Voltage
- 600V
Common questions about SIHW73N60E-GE3
- What is SIHW73N60E-GE3?
- SIHW73N60E-GE3 is MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS, manufactured by Vishay.
- Who manufactures SIHW73N60E-GE3?
- SIHW73N60E-GE3 is manufactured by Vishay.
- What package does SIHW73N60E-GE3 come in?
- SIHW73N60E-GE3 comes in a TO-247 package (Through Hole).
- Is SIHW73N60E-GE3 RoHS compliant?
- The RoHS status of SIHW73N60E-GE3 is: Compliant.
- Where can I buy SIHW73N60E-GE3?
- Send an RFQ to Makat and our AI agents source SIHW73N60E-GE3 across the whole supplier network, with verified offers inside 48 hours.