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SIJ186DP-T1-GE3
Vishay
Trans MOSFET N-CH 60V 23A 5-Pin(4+Tab) PowerPAK SO T/R
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Height
- 1.267mm
- Schedule B
- 8541290080
- Power Dissipation
- 5W
- Number of Channels
- 1
- Turn On Delay Time
- 10ns
- Turn Off Delay Time
- 14ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 3.7mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 23A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 60V
- Drain to Source Breakdown Voltage
- 60V
Common questions about SIJ186DP-T1-GE3
- What is SIJ186DP-T1-GE3?
- SIJ186DP-T1-GE3 is Trans MOSFET N-CH 60V 23A 5-Pin(4+Tab) PowerPAK SO T/R, manufactured by Vishay.
- Who manufactures SIJ186DP-T1-GE3?
- SIJ186DP-T1-GE3 is manufactured by Vishay.
- Is SIJ186DP-T1-GE3 RoHS compliant?
- The RoHS status of SIJ186DP-T1-GE3 is: Compliant.
- Where can I buy SIJ186DP-T1-GE3?
- Send an RFQ to Makat and our AI agents source SIJ186DP-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.