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SIJ470DP-T1-GE3

Vishay · SOIC

Trans MOSFET N-CH 100V 58.8A 5-Pin(4+Tab) PowerPAK SO T/R

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RoHSCompliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
SOIC
Mounting style
Surface Mount
Weight
506.605978mg
Fall Time
7ns
Rise Time
8ns
Rds On Max
9.1mO
Number of Pins
5
Input Capacitance
2.05nF
Power Dissipation
5W
Number of Channels
1
Number of Elements
1
Turn On Delay Time
12ns
Radiation Hardening
No
Turn Off Delay Time
22ns
Show 9 more specifications
Element Configuration
Single
Max Power Dissipation
56.8W
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
9.1mO
Gate to Source Voltage (Vgs)
20V
Continuous Drain Current (ID)
58.8A
Drain to Source Voltage (Vdss)
100V
Drain to Source Breakdown Voltage
100V

Common questions about SIJ470DP-T1-GE3

What is SIJ470DP-T1-GE3?
SIJ470DP-T1-GE3 is Trans MOSFET N-CH 100V 58.8A 5-Pin(4+Tab) PowerPAK SO T/R, manufactured by Vishay.
Who manufactures SIJ470DP-T1-GE3?
SIJ470DP-T1-GE3 is manufactured by Vishay.
What package does SIJ470DP-T1-GE3 come in?
SIJ470DP-T1-GE3 comes in a SOIC package (Surface Mount).
Is SIJ470DP-T1-GE3 RoHS compliant?
The RoHS status of SIJ470DP-T1-GE3 is: Compliant.
Where can I buy SIJ470DP-T1-GE3?
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