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SIJ470DP-T1-GE3
Vishay · SOIC
Trans MOSFET N-CH 100V 58.8A 5-Pin(4+Tab) PowerPAK SO T/R
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- SOIC
- Mounting style
- Surface Mount
- Weight
- 506.605978mg
- Fall Time
- 7ns
- Rise Time
- 8ns
- Rds On Max
- 9.1mO
- Number of Pins
- 5
- Input Capacitance
- 2.05nF
- Power Dissipation
- 5W
- Number of Channels
- 1
- Number of Elements
- 1
- Turn On Delay Time
- 12ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 22ns
Show 9 more specificationsShow fewer specifications
- Element Configuration
- Single
- Max Power Dissipation
- 56.8W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 9.1mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 58.8A
- Drain to Source Voltage (Vdss)
- 100V
- Drain to Source Breakdown Voltage
- 100V
Common questions about SIJ470DP-T1-GE3
- What is SIJ470DP-T1-GE3?
- SIJ470DP-T1-GE3 is Trans MOSFET N-CH 100V 58.8A 5-Pin(4+Tab) PowerPAK SO T/R, manufactured by Vishay.
- Who manufactures SIJ470DP-T1-GE3?
- SIJ470DP-T1-GE3 is manufactured by Vishay.
- What package does SIJ470DP-T1-GE3 come in?
- SIJ470DP-T1-GE3 comes in a SOIC package (Surface Mount).
- Is SIJ470DP-T1-GE3 RoHS compliant?
- The RoHS status of SIJ470DP-T1-GE3 is: Compliant.
- Where can I buy SIJ470DP-T1-GE3?
- Send an RFQ to Makat and our AI agents source SIJ470DP-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.