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SIR186DP-T1-RE3
Vishay
MOSFET, N-CH, 60V, 60A, 150DEG C, 57W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.6V RoHS Compliant: Yes
RoHSNon-Compliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Height
- 1.17mm
- Power Dissipation
- 5W
- Number of Channels
- 1
- Turn On Delay Time
- 10ns
- Turn Off Delay Time
- 14ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 3.7mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 23A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 60V
- Drain to Source Breakdown Voltage
- 60V
Common questions about SIR186DP-T1-RE3
- What is SIR186DP-T1-RE3?
- SIR186DP-T1-RE3 is MOSFET, N-CH, 60V, 60A, 150DEG C, 57W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.6V RoHS Compliant: Yes, manufactured by Vishay.
- Who manufactures SIR186DP-T1-RE3?
- SIR186DP-T1-RE3 is manufactured by Vishay.
- Is SIR186DP-T1-RE3 RoHS compliant?
- The RoHS status of SIR186DP-T1-RE3 is: Non-Compliant.
- Where can I buy SIR186DP-T1-RE3?
- Send an RFQ to Makat and our AI agents source SIR186DP-T1-RE3 across the whole supplier network, with verified offers inside 48 hours.