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SIR404DP-T1-GE3
Vishay
ingle N-Channel 20 V 0.00225 Ohm 97 nC 6.25 W Silicon SMT Mosfet POWERPAK-SO-8
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Surface Mount
- Width
- 5.15mm
- Height
- 1.04mm
- Length
- 6.15mm
- Weight
- 506.605978mg
- Fall Time
- 26ns
- Rise Time
- 20ns
- Rds On Max
- 1.6mO
- Schedule B
- 8541290080
- Number of Pins
- 8
- Input Capacitance
- 8.13nF
- Power Dissipation
- 6.25W
- Number of Channels
- 1
- Number of Elements
- 1
Show 11 more specificationsShow fewer specifications
- Turn On Delay Time
- 35ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 123ns
- Max Power Dissipation
- 104W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 1.6mO
- Gate to Source Voltage (Vgs)
- 12V
- Continuous Drain Current (ID)
- 45.6A
- Drain to Source Voltage (Vdss)
- 20V
- Drain to Source Breakdown Voltage
- 20V
Common questions about SIR404DP-T1-GE3
- What is SIR404DP-T1-GE3?
- SIR404DP-T1-GE3 is ingle N-Channel 20 V 0.00225 Ohm 97 nC 6.25 W Silicon SMT Mosfet POWERPAK-SO-8, manufactured by Vishay.
- Who manufactures SIR404DP-T1-GE3?
- SIR404DP-T1-GE3 is manufactured by Vishay.
- Is SIR404DP-T1-GE3 RoHS compliant?
- The RoHS status of SIR404DP-T1-GE3 is: Compliant.
- Where can I buy SIR404DP-T1-GE3?
- Send an RFQ to Makat and our AI agents source SIR404DP-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.