Skip to content
Catalog

SIR770DP-T1-GE3

Vishay · PowerPAK SO

Trans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R / Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode

Send an RFQ
RoHSCompliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
PowerPAK SO
Mounting style
Surface Mount
Weight
506.605978mg
Fall Time
8ns
Lead Free
Lead Free
REACH SVHC
Unknown
Rds On Max
21mO
Nominal Vgs
2.8V
Number of Pins
8
Input Capacitance
900pF
Power Dissipation
3.6W
Threshold Voltage
2.8V
Number of Channels
2
Number of Elements
2
Show 10 more specifications
Radiation Hardening
No
Element Configuration
Dual
Max Power Dissipation
17.8W
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
17.5mO
Gate to Source Voltage (Vgs)
20V
Continuous Drain Current (ID)
8A
Drain to Source Voltage (Vdss)
30V
Drain to Source Breakdown Voltage
30V

Common questions about SIR770DP-T1-GE3

What is SIR770DP-T1-GE3?
SIR770DP-T1-GE3 is Trans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R / Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode, manufactured by Vishay.
Who manufactures SIR770DP-T1-GE3?
SIR770DP-T1-GE3 is manufactured by Vishay.
What package does SIR770DP-T1-GE3 come in?
SIR770DP-T1-GE3 comes in a PowerPAK SO package (Surface Mount).
Is SIR770DP-T1-GE3 RoHS compliant?
The RoHS status of SIR770DP-T1-GE3 is: Compliant.
Where can I buy SIR770DP-T1-GE3?
Send an RFQ to Makat and our AI agents source SIR770DP-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.

Send an RFQ

Your BOM or RFQ file
or

We only use this to answer your request.