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SIRA36DP-T1-GE3
Vishay
MOSFET 30V 2.8mOhm@10V 40A N-Ch G-IV
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Surface Mount
- Weight
- 506.605978mg
- Fall Time
- 9ns
- Rise Time
- 10ns
- Rds On Max
- 2.8mO
- Number of Pins
- 8
- Input Capacitance
- 2.815nF
- Power Dissipation
- 4.1W
- Number of Channels
- 1
- Number of Elements
- 1
- Turn On Delay Time
- 12ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 26ns
- Element Configuration
- Single
Show 8 more specificationsShow fewer specifications
- Max Power Dissipation
- 44.6W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 2.8mO
- Gate to Source Voltage (Vgs)
- 16V
- Continuous Drain Current (ID)
- 40A
- Drain to Source Voltage (Vdss)
- 30V
- Drain to Source Breakdown Voltage
- 30V
Common questions about SIRA36DP-T1-GE3
- What is SIRA36DP-T1-GE3?
- SIRA36DP-T1-GE3 is MOSFET 30V 2.8mOhm@10V 40A N-Ch G-IV, manufactured by Vishay.
- Who manufactures SIRA36DP-T1-GE3?
- SIRA36DP-T1-GE3 is manufactured by Vishay.
- Is SIRA36DP-T1-GE3 RoHS compliant?
- The RoHS status of SIRA36DP-T1-GE3 is: Compliant.
- Where can I buy SIRA36DP-T1-GE3?
- Send an RFQ to Makat and our AI agents source SIRA36DP-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.