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SIS322DNT-T1-GE3
Vishay
N-Ch PowerPAK1212-8-Thin BWL 30V Gen4 7.5/12 mohm@10V/4.5V
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- Fall Time
- 14ns
- Rise Time
- 20ns
- REACH SVHC
- Unknown
- Rds On Max
- 7.5mO
- Number of Pins
- 8
- Input Capacitance
- 1nF
- Threshold Voltage
- 1.2V
- Number of Channels
- 1
- Turn On Delay Time
- 30ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 30ns
- Element Configuration
- Single
Show 7 more specificationsShow fewer specifications
- Max Power Dissipation
- 19.8W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 7.5mO
- Gate to Source Voltage (Vgs)
- 2.4V
- Continuous Drain Current (ID)
- 38.3A
- Drain to Source Voltage (Vdss)
- 30V
Common questions about SIS322DNT-T1-GE3
- What is SIS322DNT-T1-GE3?
- SIS322DNT-T1-GE3 is N-Ch PowerPAK1212-8-Thin BWL 30V Gen4 7.5/12 mohm@10V/4.5V, manufactured by Vishay.
- Who manufactures SIS322DNT-T1-GE3?
- SIS322DNT-T1-GE3 is manufactured by Vishay.
- Is SIS322DNT-T1-GE3 RoHS compliant?
- The RoHS status of SIS322DNT-T1-GE3 is: Compliant.
- Where can I buy SIS322DNT-T1-GE3?
- Send an RFQ to Makat and our AI agents source SIS322DNT-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.