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SIS427EDN-T1-GE3
Vishay
MOSFET, P CH, -30V, -50A, POWERPAK1212-8
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Surface Mount
- Fall Time
- 12ns
- Rise Time
- 40ns
- REACH SVHC
- Unknown
- Rds On Max
- 10.6mO
- Schedule B
- 8541290080
- Number of Pins
- 8
- Input Capacitance
- 1.93nF
- Number of Channels
- 1
- Turn On Delay Time
- 45ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 28ns
- Element Configuration
- Single
- Max Power Dissipation
- 52W
Show 7 more specificationsShow fewer specifications
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 17.7mO
- Gate to Source Voltage (Vgs)
- 25V
- Continuous Drain Current (ID)
- 50A
- Drain to Source Voltage (Vdss)
- 30V
- Drain to Source Breakdown Voltage
- 30V
Common questions about SIS427EDN-T1-GE3
- What is SIS427EDN-T1-GE3?
- SIS427EDN-T1-GE3 is MOSFET, P CH, -30V, -50A, POWERPAK1212-8, manufactured by Vishay.
- Who manufactures SIS427EDN-T1-GE3?
- SIS427EDN-T1-GE3 is manufactured by Vishay.
- Is SIS427EDN-T1-GE3 RoHS compliant?
- The RoHS status of SIS427EDN-T1-GE3 is: Compliant.
- Where can I buy SIS427EDN-T1-GE3?
- Send an RFQ to Makat and our AI agents source SIS427EDN-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.