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SIS435DNT-T1-GE3
Vishay
Single P-Channel 20 V 0.0140 Ohm 86 nC 3.7 W Silicon SMT Mosfet POWERPAK 12128
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- Fall Time
- 30ns
- Rise Time
- 30ns
- Rds On Max
- 5.4mO
- Schedule B
- 8541290080
- Number of Pins
- 8
- Input Capacitance
- 5.7nF
- Power Dissipation
- 3.7W
- Number of Elements
- 1
- Turn Off Delay Time
- 100ns
- Max Power Dissipation
- 3.7W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
Show 5 more specificationsShow fewer specifications
- Drain to Source Resistance
- 5.4mO
- Gate to Source Voltage (Vgs)
- 8V
- Continuous Drain Current (ID)
- 30A
- Drain to Source Voltage (Vdss)
- 20V
- Drain to Source Breakdown Voltage
- 20V
Common questions about SIS435DNT-T1-GE3
- What is SIS435DNT-T1-GE3?
- SIS435DNT-T1-GE3 is Single P-Channel 20 V 0.0140 Ohm 86 nC 3.7 W Silicon SMT Mosfet POWERPAK 12128, manufactured by Vishay.
- Who manufactures SIS435DNT-T1-GE3?
- SIS435DNT-T1-GE3 is manufactured by Vishay.
- Is SIS435DNT-T1-GE3 RoHS compliant?
- The RoHS status of SIS435DNT-T1-GE3 is: Compliant.
- Where can I buy SIS435DNT-T1-GE3?
- Send an RFQ to Makat and our AI agents source SIS435DNT-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.