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SIS892DN-T1-GE3
Vishay
Power Field-Effect Transistor, 30A I(D), 100V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Surface Mount
- Height
- 1.12mm
- Lead Free
- Lead Free
- REACH SVHC
- Unknown
- Rds On Max
- 29mO
- Schedule B
- 8541290080
- Number of Pins
- 8
- Input Capacitance
- 611pF
- Power Dissipation
- 3.7W
- Threshold Voltage
- 1.2V
- Number of Channels
- 1
- Number of Elements
- 1
- Turn On Delay Time
- 10ns
- Radiation Hardening
- No
Show 11 more specificationsShow fewer specifications
- Turn Off Delay Time
- 17ns
- Element Configuration
- Single
- Max Power Dissipation
- 52W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 24mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 30A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 100V
- Drain to Source Breakdown Voltage
- 100V
Common questions about SIS892DN-T1-GE3
- What is SIS892DN-T1-GE3?
- SIS892DN-T1-GE3 is Power Field-Effect Transistor, 30A I(D), 100V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, manufactured by Vishay.
- Who manufactures SIS892DN-T1-GE3?
- SIS892DN-T1-GE3 is manufactured by Vishay.
- Is SIS892DN-T1-GE3 RoHS compliant?
- The RoHS status of SIS892DN-T1-GE3 is: Compliant.
- Where can I buy SIS892DN-T1-GE3?
- Send an RFQ to Makat and our AI agents source SIS892DN-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.