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SIS932EDN-T1-GE3
Vishay
Trans MOSFET N-CH 30V 6A 8-Pin PowerPAK 1212 EP T/R
RoHSNon-Compliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Height
- 1.17mm
- Schedule B
- 8541290080
- Power Dissipation
- 2.6W
- Number of Channels
- 2
- Turn On Delay Time
- 15ns
- Turn Off Delay Time
- 32ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 18mO
- Gate to Source Voltage (Vgs)
- 12V
- Continuous Drain Current (ID)
- 6A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 30V
- Drain to Source Breakdown Voltage
- 30V
Common questions about SIS932EDN-T1-GE3
- What is SIS932EDN-T1-GE3?
- SIS932EDN-T1-GE3 is Trans MOSFET N-CH 30V 6A 8-Pin PowerPAK 1212 EP T/R, manufactured by Vishay.
- Who manufactures SIS932EDN-T1-GE3?
- SIS932EDN-T1-GE3 is manufactured by Vishay.
- Is SIS932EDN-T1-GE3 RoHS compliant?
- The RoHS status of SIS932EDN-T1-GE3 is: Non-Compliant.
- Where can I buy SIS932EDN-T1-GE3?
- Send an RFQ to Makat and our AI agents source SIS932EDN-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.