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SISA12ADN-T1-GE3
Vishay
MOSFET For New Design See: 78-SISHA12ADN-T1-GE3
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- REACH SVHC
- Unknown
- Rds On Max
- 4.3mO
- Schedule B
- 8541290080
- Number of Pins
- 8
- Input Capacitance
- 2.07nF
- Power Dissipation
- 3.5W
- Threshold Voltage
- 1.1V
- Number of Elements
- 1
- Radiation Hardening
- No
- Max Power Dissipation
- 28W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
Show 4 more specificationsShow fewer specifications
- Drain to Source Resistance
- 3.2mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 25A
- Drain to Source Voltage (Vdss)
- 30V
Common questions about SISA12ADN-T1-GE3
- What is SISA12ADN-T1-GE3?
- SISA12ADN-T1-GE3 is MOSFET For New Design See: 78-SISHA12ADN-T1-GE3, manufactured by Vishay.
- Who manufactures SISA12ADN-T1-GE3?
- SISA12ADN-T1-GE3 is manufactured by Vishay.
- Is SISA12ADN-T1-GE3 RoHS compliant?
- The RoHS status of SISA12ADN-T1-GE3 is: Compliant.
- Where can I buy SISA12ADN-T1-GE3?
- Send an RFQ to Makat and our AI agents source SISA12ADN-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.