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SISA96DN-T1-GE3

Vishay

30V 16A 8.8m´Î@10V10A 26.5W 2.2V@250Ã×A N Channel PowerPAK 1212-8 MOSFETs ROHS

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RoHSNon-Compliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Height
1.17mm
Schedule B
8541290080
Power Dissipation
3.5W
Number of Channels
1
Turn On Delay Time
8ns
Turn Off Delay Time
13ns
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
7.3mO
Continuous Drain Current (ID)
14.8A
Max Junction Temperature (Tj)
150°C
Drain to Source Voltage (Vdss)
30V
Drain to Source Breakdown Voltage
30V

Common questions about SISA96DN-T1-GE3

What is SISA96DN-T1-GE3?
SISA96DN-T1-GE3 is 30V 16A 8.8m´Î@10V10A 26.5W 2.2V@250Ã×A N Channel PowerPAK 1212-8 MOSFETs ROHS, manufactured by Vishay.
Who manufactures SISA96DN-T1-GE3?
SISA96DN-T1-GE3 is manufactured by Vishay.
Is SISA96DN-T1-GE3 RoHS compliant?
The RoHS status of SISA96DN-T1-GE3 is: Non-Compliant.
Where can I buy SISA96DN-T1-GE3?
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