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SISA96DN-T1-GE3
Vishay
30V 16A 8.8m´Î@10V10A 26.5W 2.2V@250Ã×A N Channel PowerPAK 1212-8 MOSFETs ROHS
RoHSNon-Compliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Height
- 1.17mm
- Schedule B
- 8541290080
- Power Dissipation
- 3.5W
- Number of Channels
- 1
- Turn On Delay Time
- 8ns
- Turn Off Delay Time
- 13ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 7.3mO
- Continuous Drain Current (ID)
- 14.8A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 30V
- Drain to Source Breakdown Voltage
- 30V
Common questions about SISA96DN-T1-GE3
- What is SISA96DN-T1-GE3?
- SISA96DN-T1-GE3 is 30V 16A 8.8m´Î@10V10A 26.5W 2.2V@250Ã×A N Channel PowerPAK 1212-8 MOSFETs ROHS, manufactured by Vishay.
- Who manufactures SISA96DN-T1-GE3?
- SISA96DN-T1-GE3 is manufactured by Vishay.
- Is SISA96DN-T1-GE3 RoHS compliant?
- The RoHS status of SISA96DN-T1-GE3 is: Non-Compliant.
- Where can I buy SISA96DN-T1-GE3?
- Send an RFQ to Makat and our AI agents source SISA96DN-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.