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SISH114ADN-T1-GE3

Vishay

Single N-Channel 30 V 7.5 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8

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RoHSCompliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Height
980µm
Power Dissipation
3.7W
Number of Channels
1
Turn On Delay Time
11ns
Turn Off Delay Time
20ns
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
6.2mO
Gate to Source Voltage (Vgs)
20V
Continuous Drain Current (ID)
18A
Max Junction Temperature (Tj)
150°C
Drain to Source Voltage (Vdss)
30V
Drain to Source Breakdown Voltage
30V

Common questions about SISH114ADN-T1-GE3

What is SISH114ADN-T1-GE3?
SISH114ADN-T1-GE3 is Single N-Channel 30 V 7.5 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8, manufactured by Vishay.
Who manufactures SISH114ADN-T1-GE3?
SISH114ADN-T1-GE3 is manufactured by Vishay.
Is SISH114ADN-T1-GE3 RoHS compliant?
The RoHS status of SISH114ADN-T1-GE3 is: Compliant.
Where can I buy SISH114ADN-T1-GE3?
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