CatalogSend an RFQ
SISH114ADN-T1-GE3
Vishay
Single N-Channel 30 V 7.5 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Height
- 980µm
- Power Dissipation
- 3.7W
- Number of Channels
- 1
- Turn On Delay Time
- 11ns
- Turn Off Delay Time
- 20ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 6.2mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 18A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 30V
- Drain to Source Breakdown Voltage
- 30V
Common questions about SISH114ADN-T1-GE3
- What is SISH114ADN-T1-GE3?
- SISH114ADN-T1-GE3 is Single N-Channel 30 V 7.5 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8, manufactured by Vishay.
- Who manufactures SISH114ADN-T1-GE3?
- SISH114ADN-T1-GE3 is manufactured by Vishay.
- Is SISH114ADN-T1-GE3 RoHS compliant?
- The RoHS status of SISH114ADN-T1-GE3 is: Compliant.
- Where can I buy SISH114ADN-T1-GE3?
- Send an RFQ to Makat and our AI agents source SISH114ADN-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.