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SISS40DN-T1-GE3
Vishay
100V 36.5A 3.7W 21m´Î@10V10A 3.5V@250Ã×A N Channel PowerPAK-1212-8S MOSFETs ROHS
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Surface Mount
- Fall Time
- 5ns
- Rise Time
- 5ns
- Rds On Max
- 21mO
- Schedule B
- 8541290080
- Number of Pins
- 8
- Input Capacitance
- 845pF
- Power Dissipation
- 3.7W
- Number of Channels
- 1
- Number of Elements
- 1
- Turn On Delay Time
- 14ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 14ns
- Element Configuration
- Single
Show 8 more specificationsShow fewer specifications
- Max Power Dissipation
- 52W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 21.6mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 36.5A
- Drain to Source Voltage (Vdss)
- 100V
- Drain to Source Breakdown Voltage
- 100V
Common questions about SISS40DN-T1-GE3
- What is SISS40DN-T1-GE3?
- SISS40DN-T1-GE3 is 100V 36.5A 3.7W 21m´Î@10V10A 3.5V@250Ã×A N Channel PowerPAK-1212-8S MOSFETs ROHS, manufactured by Vishay.
- Who manufactures SISS40DN-T1-GE3?
- SISS40DN-T1-GE3 is manufactured by Vishay.
- Is SISS40DN-T1-GE3 RoHS compliant?
- The RoHS status of SISS40DN-T1-GE3 is: Compliant.
- Where can I buy SISS40DN-T1-GE3?
- Send an RFQ to Makat and our AI agents source SISS40DN-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.